LONDON — Toshiba Corporation has developed a gallium nitride (GaN) based power field effect transistor that it says far surpasses the operating performance of the gallium arsenide FET widely used in ...

Gallium Arsenide: Key To Faster, Better Computing Since the early 1970s, scientists have been promoting gallium arsenide as a faster, more efficient substrate material than silicon for making ...

Congratulations go out to Toshiba for scoring a real technological first with its development of a gallium-nitride (GaN) power field-effect transistor (FET), designed for the Ku-band (12 to 18GHz) ...

The NTE3085 is an optoisolator consisting of a gallium-aluminum-arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. It can be used as remote variable resistor or ...

Gallium is a post-transition metal element (atomic number 31) with diverse roles across materials science, electronics, and photonics research. It forms key III–V compound semiconductors such as ...