Toshiba has developed a SiC MOSFET that arranges embedded Schottky barrier diodes in a check pattern to achieve both low on-resistance and high reliability. The company reports that the design reduces ...

Find a downloadable version of this story in pdf format at the end of the story. Silicon Schottky diodes are used in power applications because of their low forward voltage drop, which allows lower ...

Infineon Technologies AG expands the comprehensive SiC portfolio introducing the 5th generation1200V thinQ!™ SiC Schottky diodes. The new 1200V SiC diodes feature ultra-low forward voltage even at ...

RIR Power Electronics Ltd announced the launch of its silicon carbide (SiC)-merged-PiN Schottky (MPS) diodes, marking a significant advancement in power device technology for next-generation electric ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...

Many power management applications use Schottky diodes for the parallel operation of multiple power sources. This type of power redundancy is often found in systems with solid-state drives (SSDs), ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

Vishay Intertechnology, Inc. has announced the introduction of 16 new silicon carbide (SiC) Schottky diodes available in 650 V and 1200 V ratings, housed in the SOT-227 package. Designed for ...

Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. CoolGaN Transistors G5 with integrated Schottky diode ...

Vishay Intertechnology has announced the third generation of its 650 and 1,200V SiC (silicon carbide) Schottky diodes, in a 2.6 x 5.2mm surface-mount package. The DO-221AC package, branded ‘SlimSMA HV ...